TDA7560 - Datasheet Catalog

® 

TDA7560 

4 x 45W QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD 

SUPERIOR OUTPUT POWER CAPABILITY: 

4 x 50W/4Ω MAX. 

4 x 45W/4Ω EIAJ 

4 x 30W/4Ω @ 14.4V, 1KHz, 10% 

4 x 80W/2Ω MAX. 

4 x 77W/2Ω EIAJ 

4 x 55W/2Ω @ 14.4V, 1KHz, 10% 

EXCELLENT 2Ω DRIVING CAPABILITY 

HI-FI CLASS DISTORTION 

LOW OUTPUT NOISE 

ST-BY FUNCTION 

MUTE FUNCTION 

AUTOMUTE AT MIN. SUPPLY VOLTAGE DE- 

TECTION 

LOW EXTERNAL COMPONENT COUNT: 

– INTERNALLY FIXED GAIN (26dB) 

– NO EXTERNAL COMPENSATION 

– NO BOOTSTRAP CAPACITORS 

ON BOARD 0.35A HIGH SIDE DRIVER 

PROTECTIONS: 

OUTPUT SHORT CIRCUIT TO GND, TO VS, 

ACROSS THE LOAD 

VERY INDUCTIVE LOADS 

OVERRATING CHIP TEMPERATURE WITH 

SOFT THERMAL LIMITER 

OUTPUT DC OFFSET DETECTION 

BLOCK AND APPLICATION DIAGRAM 

MULTIPOWER BCD TECHNOLOGY 

MOSFET OUTPUT POWER STAGE 

ORDERING NUMBER: TDA7560 

LOAD DUMP VOLTAGE 

FORTUITOUS OPEN GND 

REVERSED BATTERY 

ESD 

FLEXIWATT25 

DESCRIPTION 

The TDA7560 is a breakthrough BCD (Bipolar / 

CMOS / DMOS) technology class AB Audio 

Power Amplifier in Flexiwatt 25 package designed 

for high power car radio. The fully complementary 

P-Channel/N-Channel output structure allows a 

rail to rail output voltage swing which, combined 

with high output current and minimised saturation 

losses sets new power references in the car-radio 

field, with unparalleled distortion performances. 

Vcc1 

Vcc2 

470µF 

100nF 

ST-BY 

MUTE 

HSD 

HSD/V OFF DET 

OUT1+ 

IN1 

OUT1- 

0.1µF 

PW-GND 

OUT2+ 

IN2 

OUT2- 

0.1µF 

PW-GND 

OUT3+ 

IN3 

OUT3- 

0.1µF 

PW-GND 

OUT4+ 

IN4 

OUT4- 

0.1µF 

PW-GND 

AC-GND 

SVR TAB S-GND 

0.47µF 47µF 

D94AU158C 

December 2001 

1/10


ABSOLUTE MAXIMUM RATINGS 

Symbol Parameter Value Unit 

V CC Operating Supply Voltage 18 V 

V CC (DC) DC Supply Voltage 28 V 

V CC (pk) Peak Supply Voltage (t = 50ms) 50 V 

I O 

Output Peak Current: 

Repetitive (Duty Cycle 10% at f = 10Hz) 

Non Repetitive (t = 100µs) 

P tot Power dissipation, (T case = 70°C) 80 W 

T j Junction Temperature 150 °C 

T stg Storage Temperature – 55 to 150 °C 

9 

10 

A 

A 

PIN CONNECTION (Top view) 

1 25 

TAB 

P-GND2 

ST-BY 

OUT2+ 

P-GND1 

OUT1+ 

SVR 

IN1 

IN2 

S-GND 

IN4 

IN3 

AC-GND 

OUT3+ 

P-GND3 

VCC 

OUT4+ 

MUTE 

OUT2- 

VCC 

OUT1- 

OUT3- 

OUT4- 

P-GND4 

HSD 

D94AU159A 

THERMAL DATA 

Symbol Parameter Value Unit 

R th j-case Thermal Resistance Junction to Case Max. 1 °C/W 

2/10

ELECTRICAL CHARACTERISTICS (VS = 13.2V; f = 1KHz; Rg = 600Ω; RL = 4Ω; Tamb = 25°C; 

Refer to the test and application diagram, unless otherwise specified.) 

Symbol Parameter Test Condition Min. Typ. Max. Unit 

I q1 Quiescent Current R L = ∞ 120 200 320 mA 

V OS Output Offset Voltage Play Mode ±60 mV 

dV OS During mute ON/OFF output 

±60 mV 

offset voltage 

G v Voltage Gain 25 26 27 dB 

dG v Channel Gain Unbalance ±1 dB 

P o Output Power V S = 13.2V; THD = 10% 

V S = 13.2V; THD = 1% 

V S = 14.4V; THD = 10% 

V S = 14.4V; THD = 1% 

V S = 13.2V; THD = 10%, 2Ω 

V S = 13.2V; THD = 1%, 2Ω 

V S = 14.4V; THD = 10%, 2Ω 

V S = 14.4V; THD = 1%, 2Ω 

P o EIAJ EIAJ Output Power (*) V S = 13.7V; R L = 4Ω 

V S = 13.7V; R L = 2Ω 

P o max. Max. Output Power (*) V S = 14.4V; R L = 4Ω 

V S = 14.4V; R L = 2Ω 

THD Distortion P o = 4W 

P o = 15W; R L = 2Ω 

e No Output Noise "A" Weighted 

Bw = 20Hz to 20KHz 

23 

16 

28 

20 

42 

32 

50 

40 

25 

19 

30 

23 

45 

34 

55 

43 

41 45 

77 

50 

80 

0.006 

0.015 

35 

50 

0.05 

0.07 

50 

70 

SVR Supply Voltage Rejection f = 100Hz; V r = 1Vrms 50 70 dB 

f ch High Cut-Off Frequency P O = 0.5W 100 300 KHz 

R i Input Impedance 80 100 120 KΩ 

C T Cross Talk f = 1KHz P O = 4W 

60 70 – dB 

f = 10KHz P O = 4W 

60 – dB 

I SB St-By Current Consumption V St-By = 1.5V 75 µA 

I pin4 St-by pin Current VSt-By = 1.5V to 3.5V ±10 µA 

V SB out St-By Out Threshold Voltage (Amp: ON) 3.5 V 

V SB in St-By in Threshold Voltage (Amp: OFF) 1.5 V 

A M Mute Attenuation P Oref = 4W 80 90 dB 

V M out Mute Out Threshold Voltage (Amp: Play) 3.5 V 

V M in Mute In Threshold Voltage (Amp: Mute) 1.5 V 

V AM in V S Automute Threshold (Amp: Mute) 

Att ≥ 80dB; P Oref = 4W 

(Amp: Play) 

6.5 7 

V 

Att < 0.1dB; P O = 0.5W 

7.5 8 V 

I pin22 Muting Pin Current V MUTE = 1.5V 

7 12 18 µA 

(Sourced Current) 

V MUTE = 3.5V -5 18 µA 

HSD SECTION 

V dropout Dropout Voltage IO = 0.35A; VS = 9 to 16V 0.25 0.6 V 

I prot Current Limits 400 800 mA 

OFFSET DETECTOR SECTION 

V M_ON Mute Voltage for DC offset V stby = 5V 8 V 

V M_OFF 

detection enabled 

6 V 

V OFF Detected Differential Output Offset V stby = 5V; V mute = 8V ±2 ±3 ±4 V 

V 25_T Pin 25 Voltage for Detection = 

TRUE 

V stby = 5V; V mute = 8V 

V OFF > ±4V 

0 1.5 V 

V 25_F Pin 25 Voltage for Detection = 

FALSE 

(*) Saturated square wave output. 

V stby = 5V; V mute = 8V 

V OFF > ±2V 


W 

W 

W 

W 

W 

W 

W 

W 

W 

W 

W 

W 

% 

% 

µV 

µV 

12 V 

3/10


Figure 1: Standard Test and Application Circuit 

C8 

0.1µF 

C7 

2200µF 

Vcc1-2 

Vcc3-4 

ST-BY 

MUTE 

IN1 

R1 

10K 

R2 

47K 

C1 

0.1µF 

C9 

1µF 

C10 

1µF 

4 

22 

11 

6 20 

9 

8 

7 

5 

2 

3 

OUT1 

OUT2 

IN2 

12 

17 

C2 0.1µF 

18 

OUT3 

IN3 

15 

19 

C3 0.1µF 

21 

IN4 

14 

24 

OUT4 

C4 0.1µF 

S-GND 

13 

16 10 25 1 

23 

C5 

0.47µF 

SVR 

C6 

47µF 

HSD 

TAB 

D95AU335B 

4/10


Figure 2: P.C.B. and component layout of the figure 1 (1:1 scale) 

COMPONENTS & 

TOP COPPER LAYER 

BOTTOM COPPER LAYER 

5/10


Figure 3. Quiescent current vs. supply 

voltage. 

240 Id (mA) Vi = 0 

220 

200 

180 

160 

RL = 4 Ohm 

140 

8 10 12 14 16 18 

Vs (V) 

Figure 4. Output power vs. supply voltage. 

Po (W) 

80 

75 

Po-max 

70 

65 

60 RL= 4 Ohm 

55 f= 1 KHz 

50 

THD= 10 % 

45 

40 

35 

30 

25 

20 

THD= 1 % 

15 

10 

5 

8 9 10 11 12 13 14 15 16 17 18 

Vs (V) 

Figure 5. Output power vs. supply voltage. 

Po (W) 

130 

120 

Po-max 

110 

100 

90 

RL= 2 Ohm 

f= 1 KHz THD= 10 % 

80 

70 

60 

50 

40 

THD= 1 % 

30 

20 

10 

8 9 10 11 12 13 14 15 16 17 18 

Vs (V) 

Figure 7. Distortion vs. output power 

Figure 6. Distortion vs. output Power 

10 THD (%) Vs= 14.4 V 

1 

RL = 4 Ohm 

f = 10 KHz 

0.1 

0.01 

f = 1 KHz 

0.001 

0.1 1 10 

Po (W) 

Figure 8. Distortion vs. frequency. 

10 

THD (%) 

1 

10 THD (%) f = 10 KHz 

Vs= 14.4 V 

RL = 2 Ohm 

1 

Vs = 14.4 V 

RL = 4 Ohm 

Po = 4 W 

0.1 

0.1 

0.01 

f = 1 KHz 

0.01 

0.001 

0.1 1 10 

Po (W) 

6/10 

0.001 

10 100 1000 10000 

f (Hz)


Figure 9. Distortion vs. frequency. 

THD (%) 

10 

Figure 10. Crosstalk vs. frequency. 

CROSSTALK (dB) 

90 

1 

0.1 

0.01 

Vs = 14.4 V 

RL = 2 Ohm 

Po = 8 W 

80 

70 

60 

50 

40 

30 

RL = 4 Ohm 

Po = 4 W 

Rg = 600 Ohm 

0.001 

10 100 1000 10000 

f (Hz) 

20 

10 100 1000 10000 

f (Hz) 

Figure 11. Supply voltage rejection vs. frequency. 

SVR (dB) 

100 

90 

80 

70 

60 

50 

Rg= 600 Ohm 

40 Vripple= 1 Vrms 

30 

20 

10 100 1000 10000 

f (Hz) 

Figure 12. Output attenuation vs. supply 

voltage. 

0 

-20 

-40 

-60 

-80 

OUT ATTN (dB) 

RL = 4 Ohm 

Po= 4 W ref. 

-100 

5 6 7 8 9 10 

Vs (V) 

Figure 13. Output noise vs. source resistance. 

130 

120 

110 

100 

En (uV) 

Vs= 14.4 V 

RL= 4 Ohm 

90 

80 

70 

60 

22-22 KHz lin. 

50 

40 

"A" wgtd 

30 

20 

1 10 100 1000 

Rg (Ohm) 

10000 100000 

Figure 14. Power dissipation & efficiency vs. 

output power (sine-wave operation) 

90 Ptot (W) n (%) 

90 

80 

n 

80 

70 

60 

Vs= 13.2 V 

RL= 4 x 4 Ohm 

f= 1 KHz SINE 

70 

60 

50 

50 

40 

40 

30 

Ptot 

30 

20 

20 

10 

10 

0 

0 2 4 6 

0 

8 10 12 14 16 18 20 22 24 26 28 30 

Po (W) 

7/10


Figure 15. Power dissipation vs. ouput power 

(Music/Speech Simulation) 

30 

25 

20 

15 

10 

5 

Ptot (W) 

Vs= 13.2 V 

RL= 4 x 4 Ohm 

GAUSSIAN NOISE 

CLIP START 

0 1 2 3 4 5 6 

Po (W) 

DC OFFSET DETECTOR 

The TDA7560 integrates a DC offset detector to 

avoid that an anomalous DC offset on the inputs 

of the amplifier may be multiplied by the gain and 

result in a dangerous large offset on the outputs 

which may lead to speakers damage for overheating. 

The feature is enabled by the MUTE pin and 

works with the amplifier umuted and with no signal 

on the inputs. The DC offset detection is signaled 

out on the HSD pin. 

APPLICATION HINTS (ref. to the circuit of fig. 1) 

SVR 

Besides its contribution to the ripple rejection, the 

SVR capacitor governs the turn ON/OFF time sequence 

and, consequently, plays an essential role 

in the pop optimization during ON/OFF transients.To 

conveniently serve both needs, ITS 

MINIMUM RECOMMENDED VALUE IS 10µF. 

INPUT STAGE 

The TDA7560’s inputs are ground-compatible and 

can stand very high input signals (± 8Vpk) without 

any performances degradation. 

If the standard value for the input capacitors 

(0.1µF) is adopted, the low frequency cut-off will 

amount to 16 Hz. 

Figure 16. Power dissipation vs. output power 

(Music/Speech Simulation) 

60 

55 

50 

45 

40 

35 

30 

25 

20 

Ptot (W) 

Vs= 13.2 V 

RL= 4 x 2 Ohm 

GAUSSIAN NOISE 

CLIP START 

15 

10 

5 

0 2 4 6 8 10 

Po (W) 

STAND-BY AND MUTING 

STAND-BY and MUTING facilities are both 

CMOS-COMPATIBLE. In absence of true CMOS 

ports or microprocessors, a direct connection to 

Vs of these two pins is admissible but a 470 

kOhm equivalent resistance should present 

between the power supply and the muting and 

stand-by pins. 

R-C cells have always to be used in order to 

smooth down the transitions for preventing any 

audible transient noises. 

About the stand-by, the time constant to be assigned 

in order to obtain a virtually pop-free transition 

has to be slower than 2.5V/ms. 

HEATSINK DEFINITION 

Under normal usage (4 Ohm speakers) the 

heatsink’s thermal requirements have to be deduced 

from fig. 15, which reports the simulated 

power dissipation when real music/speech programmes 

are played out. Noise with gaussiandistributed 

amplitude was employed for this simulation. 

Based on that, frequent clipping occurence 

(worst-case) will cause Pdiss = 26W. Assuming 

Tamb = 70°C and TCHIP = 150°C as boundary 

conditions, the heatsink’s thermal resistance 

should be approximately 2°C/W. This would avoid 

any thermal shutdown occurence even after longterm 

and full-volume operation. 

8/10


DIM. 

mm 

inch 

MIN. TYP. MAX. MIN. TYP. MAX. 

A 4.45 4.50 4.65 0.175 0.177 0.183 

B 1.80 1.90 2.00 0.070 0.074 0.079 

C 1.40 0.055 

D 0.75 0.90 1.05 0.029 0.035 0.041 

E 0.37 0.39 0.42 0.014 0.015 0.016 

F (1) 0.57 0.022 

G 0.80 1.00 1.20 0.031 0.040 0.047 

G1 23.75 24.00 24.25 0.935 0.945 0.955 

H (2) 28.90 29.23 29.30 1.138 1.150 1.153 

H1 17.00 0.669 

H2 12.80 0.503 

H3 0.80 0.031 

L (2) 22.07 22.47 22.87 0.869 0.884 0.904 

L1 18.57 18.97 19.37 0.731 0.747 0.762 

L2 (2) 15.50 15.70 15.90 0.610 0.618 0.626 

L3 7.70 7.85 7.95 0.303 0.309 0.313 

L4 5 0.197 

L5 3.5 0.138 

M 3.70 4.00 4.30 0.145 0.157 0.169 

M1 3.60 4.00 4.40 0.142 0.157 0.173 

N 2.20 0.086 

O 2 0.079 

R 1.70 0.067 

R1 0.5 0.02 

R2 0.3 0.12 

R3 1.25 0.049 

R4 0.50 0.019 

V 

5˚ (Typ.) 

V1 

3˚ (Typ.) 

V2 

20˚ (Typ.) 

V3 

45˚ (Typ.) 

(1): dam-bar protusion not included 

(2): molding protusion included 

OUTLINE AND 

MECHANICAL DATA 

Flexiwatt25 

V3 

H3 

H 

H1 

H2 

A 

O 

R3 

L2 

L3 L4 

N 

R4 

V2 

R 

R2 

L 

L1 

V1 

V1 

R2 

R1 

D 

L5 R1 R1 

V 

G 

G1 

F 

M 

E 

M1 

B 

C 

V 

FLEX25ME 

9/10


Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences 

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is 

granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are 

subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products 

are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

The ST logo is a registered trademark of STMicroelectronics 

© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved 

STMicroelectronics GROUP OF COMPANIES 

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - 

Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 

http://www.st.com 

10/10

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